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| BCR25RM-12LB Triac Medium Power Use REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Features * * * * IT (RMS) : 25 A VDRM: 600 V IFGTI, IRGTI, IRGTIII: 50 mA Viso: 2000 V * The product guaranteed maximum junction temperature of 150C * Insulated Type * Planar Type Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off control of copier lamp Maximum Ratings Parameter Repetitive peak off-state voltage Note1 Non-repetitive peak off-state voltage Note1 Notes: 1. Gate open. Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 1 of 7 BCR25RM-12LB Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 25 250 313 5 0.5 10 2 -40 to +150 -40 to +150 5.2 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 96C 50 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2/0.1 -- 10/1 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 3.0/5.0 1.5 2.0 2.0 2.0 50 50 50 -- 1.7 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C /150C, VDRM applied Tc = 25C, ITM = 40 A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C /150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C /150C Gate trigger curentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125/150C 2. Rate of decay of on-state commutating current (di/dt)c = -13 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Main Current Main Voltage (dv/dt)c Time VD REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 2 of 7 BCR25RM-12LB Performance Curves Maximum On-State Characteristics 103 400 Rated Surge On-State Current Surge On-State Current (A) 3.5 On-State Current (A) 300 102 Tj = 150C 200 101 Tj = 25C 100 100 0.5 1.0 1.5 2.0 2.5 3.0 0 100 101 102 On-State Voltage (V) Conduction Time (Cycles at 50 Hz) x 100 (%) Gate Characteristics (I, II and III) 5 3 2 VGM = 10 V PG(AV) = 0.5 W PGM = 5 W Gate Trigger Current vs. Junction Temperature 103 Typical Example Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 VGT = 2.0 V IGM = 2 A Gate Trigger Current (Tj = 25C) Gate Trigger Current (Tj = tC) 102 IFGT I IRGT I IRGT III 10-1 IFGT I, IRGT I, IRGT III 7 5 1 2 3 5 7 102 2 3 10 VGD = 0.1 V 5 7103 23 5 7104 101 -40 0 40 80 120 160 Gate Current (mA) Junction Temperature (C) x 100 (%) Gate Trigger Voltage vs. Junction Temperature 103 Typical Example Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.4 1.0 0 10-1 100 101 102 103 104 Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage (Tj = tC) 102 101 -40 0 40 80 120 160 Junction Temperature (C) Conduction Time (Cycles at 50 Hz) REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 3 of 7 BCR25RM-12LB Allowable Case Temperature vs. RMS On-State Current 160 140 Maximum On-State Power Dissipation 40 On-State Power Dissipation (W) 30 Case Temperature (C) Curves apply regardless of conduction angle 120 100 80 60 40 20 10 360 Conduction Resistive, inductive loads 0 0 10 20 30 40 360 Conduction 20 Resistive, inductive loads 0 0 10 20 30 40 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are blackpainted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 160 160 t2.3 Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Ambient Temperature (C) 120 100 80 60 40 20 0 0 10 Ambient Temperature (C) 140 140 120 100 80 60 40 20 0 0 1 120 120 t2.3 100 100 t2.3 20 30 40 2 3 4 5 RMS On-State Current (A) RMS On-State Current (A) x 100 (%) x 100 (%) Breakover Voltage vs. Junction Temperature 103 Typical Example Repetitive Peak Off-State Current vs. Junction Temperature 106 Typical Example 105 Repetitive Peak Off-State Current (Tj = 25C) Repetitive Peak Off-State Current (Tj = tC) Breakover Voltage (Tj = 25C) Breakover Voltage (Tj = tC) 102 104 103 101 -40 0 40 80 120 160 102 -40 0 40 80 120 160 Junction Temperature (C) Junction Temperature (C) REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 4 of 7 BCR25RM-12LB Holding Current vs. Junction Temperature Latching Current vs. Junction Temperature 103 T2+, G- Typical Example x 100 (%) 103 Typical Example Latching Current (mA) Distribution Holding Current (Tj = 25C) Holding Current (Tj = tC) 102 102 101 T2-, G- Typical Example T2+, G+ Typical Example 101 -40 0 40 80 120 160 100 -40 0 40 80 120 160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) 160 140 120 100 80 60 40 20 0 101 102 I Quadrant III Quadrant Typical Example Tj = 125C Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150C) 160 140 120 100 80 60 40 20 0 101 I Quadrant III Quadrant Typical Example Tj = 150C 103 104 102 103 104 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics (Tj = 125C) Commutation Characteristics (Tj = 150C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) VD Critical Rate of Rise of Off-State Commutating Voltage (V/s) 102 7 5 3 2 101 7 5 3 2 100 7 3 Typical Example Tj = 125C IT = 4 A = 500 s VD = 200 V f = 3 Hz Main Voltage (dv/dt)c Main Current IT Time 102 7 5 3 2 101 7 5 3 2 (di/dt)c Time Typical Example Tj = 150C IT = 4 A = 500 s VD = 200 V f = 3 Hz Main Voltage (dv/dt)c Main Current IT Time VD (di/dt)c Time I Quadrant III Quadrant I Quadrant III Quadrant 5 7 101 23 5 7 102 2 3 100 Value 7 3 5 7 101 Minimum Characteristics 23 5 7 102 2 3 Rate of Decay of On-State Commutating Current (A/ms) Rate of Decay of On-State Commutating Current (A/ms) REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 5 of 7 BCR25RM-12LB Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) Gate Trigger Current (DC) Gate Trigger Current (tw) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Typical Example IFGT I IRGT III IRGT I 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 Recommended Circuit Values Around The Triac Load C1 6V V A 6V A V R1 330 C0 R0 330 Test Procedure I 6 Test Procedure II C1 = 0.1 to 0.47F C0 = 0.1F R0 = 100 R1 = 47 to 100 6V V A 330 Test Procedure III REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 6 of 7 BCR25RM-12LB Package Dimensions Package Name TO-3PFM JEITA Package Code SC-93 RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV MASS[Typ.] 5.2g Unit: mm 5.5 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.0 0.3 2.7 0.3 5.0 0.3 19.9 0.3 2.0 0.3 0.66 5.45 0.5 + 0.2 - 0.1 21.0 0.5 4.0 0.3 2.6 0.86 3.2 0.3 1.6 0.86 0.2 0.9 + 0.1 - 5.45 0.5 Order Code Lead form Straight type Standard packing Magazine (Tube) Quantity 30 Standard order code Type name Standard order code example BCR25RM-12LB Note : Please confirm the specification about the shipping in detail. REJ03G1715-0100 Rev.1.00 Jul 10, 2008 Page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. 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